Diodes Incorporated
ZXTP2014ZQTA
Bipolar Transistors - BJT Pwr Low Sat Transist
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 10 A
- Collector- Emitter Voltage VCEO Max
- 140 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 255 mV
- Pd - Power Dissipation
- 1.5 W
- Gain Bandwidth Product fT
- 120 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (6)
- Qualification
- AEC-Q101
- Continuous Collector Current
- - 3 A
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 100 at - 1 A, - 5 V
- DC Current Gain hFE Max
- 300 at - 1 A, - 5 V
- Unit Weight
- 0.001834 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.