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NXP / Freescale

AFIC10275NR5

RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP / Freescale
Product Category
RF MOSFET Transistors
Package
TO-270WB-14
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

15 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
1.6 A
Vds - Drain-Source Breakdown Voltage
- 500 mV, 100 V
Gain
32.1 dB
Output Power
250 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Operating Frequency
978 MHz to 1090 MHz
Type
RF Power MOSFET
Number of Channels
1 Channel
Vgs - Gate-Source Voltage
- 6 V, 10 V
Show more parameters (3)
Vgs th - Gate-Source Threshold Voltage
1.3 V
Part # Aliases
935312592578
Unit Weight
0.058255 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

AFIC10275NR5 Specifications and Datasheet | ChipSourceHub