Infineon Technologies
IPP65R420CFDXKSA2
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- CFD2
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 8.7 A
- Rds On - Drain-Source Resistance
- 420 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 31.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 83.3 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- CoolMOS
- Transistor Type
- 1 N-Channel
- Fall Time
- 8 ns
- Rise Time
- 7 ns
- Typical Turn-Off Delay Time
- 38 ns
- Typical Turn-On Delay Time
- 10 ns
- Part # Aliases
- IPP65R420CFD
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.