MACOM
CGHV40180F
GaN FETs GaN HEMT
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 440223
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Id - Continuous Drain Current
- 18 A
- Vgs th - Gate-Source Threshold Voltage
- - 3.8 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 150 W
- Country of Assembly
- US
- Country of Origin
- US
- Development Kit
- CGHV40180F-TB1
- Gain
- 20.3 dB
- Maximum Operating Frequency
- 1 GHz
Show more parameters (6)
- Minimum Operating Frequency
- 50 MHz
- Output Power
- 180 W
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
- Unit Weight
- 1 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.