Infineon Technologies
BCV61CE6327HTSA1
Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- BCV61
- Package
- SOT-143-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 800
- Continuous Collector Current
- 100 mA
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 420
- Pd - Power Dissipation
- 300 mW
- Part # Aliases
- 61C BCV BCV61CE6327XT E6327 SP000010887
- Unit Weight
- 0.000388 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.