Central Semiconductor
2N6190
Bipolar Transistors - BJT Small Signal Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N6190
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 5 A
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 120 at 2 A, 2 V
- DC Collector/Base Gain hfe Min
- 30 at 2 A, 2 V
Show more parameters (2)
- Pd - Power Dissipation
- 10 W
- Part # Aliases
- 2N6190 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.