onsemi
NJVMJD42CT4G
Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD42C
- Package
- DPAK-3 (TO-252-3)
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 6 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Pd - Power Dissipation
- 1.75 W
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (6)
- Qualification
- AEC-Q100
- Country of Origin
- VN
- DC Collector/Base Gain hfe Min
- 30
- DC Current Gain hFE Max
- 30 at 300 mA, 4 V
- Part # Aliases
- NJVMJD42CT4G-VF01
- Unit Weight
- 0.012346 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.