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STMicroelectronics

STP12NM50

MOSFET N-Ch 500 Volt 12 Amp

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
MOSFET
Series
STP12NM50
Package
TO-220-3
Mounting Style
Through Hole
RoHS
Compliant (source record)

Technical Specifications

21 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
12 A
Rds On - Drain-Source Resistance
350 mOhms
Vgs - Gate-Source Voltage
30 V
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
160 W
Configuration
Single
Channel Mode
Enhancement
Show more parameters (9)
Height
9.15 mm
Length
10.4 mm
Transistor Type
1 N-Channel
Type
MOSFET
Width
4.6 mm
Forward Transconductance - Min
5.5 S
Rise Time
10 ns
Typical Turn-On Delay Time
20 ns
Unit Weight
0.079014 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

STP12NM50 Specifications and Datasheet | ChipSourceHub