Central Semiconductor
2N3740
Bipolar Transistors - BJT Leaded Power Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3740
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 600 mV
- Maximum DC Collector Current
- 10 A
- Gain Bandwidth Product fT
- 4 MHz
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 4 A
- Pd - Power Dissipation
- 25 W
- Part # Aliases
- 2N3740 PBFREE
- Unit Weight
- 0.206000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.