STMicroelectronics
ST16010
RF MOSFET Transistors 10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Series
- ST16010
- Package
- MM-2
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
13 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 90 V
- Operating Frequency
- 930 MHz
- Gain
- 21 dB
- Output Power
- 12 W
- Maximum Operating Temperature
- + 200 C
- Forward Transconductance - Min
- 1 S
- Moisture Sensitive
- Yes
- Number of Channels
- 1 Channel
- Type
- RF Power MOSFET
- Vgs - Gate-Source Voltage
- - 8 V, + 10 V
Show more parameters (1)
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.