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onsemi

FDA59N25

MOSFETs 250V N-Ch MOSFET

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
FDA59N25
Package
TO-3PN-3
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

22 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
250 V
Id - Continuous Drain Current
59 A
Rds On - Drain-Source Resistance
49 mOhms
Vgs - Gate-Source Voltage
- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Qg - Gate Charge
82 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
392 W
Show more parameters (10)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
CN
Fall Time
170 ns
Forward Transconductance - Min
45 S
Rise Time
480 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
90 ns
Typical Turn-On Delay Time
70 ns
Unit Weight
0.162260 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FDA59N25 Specifications and Datasheet | ChipSourceHub