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STMicroelectronics

STWA70N65DM6

MOSFETs N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long lea

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
MOSFETs
Package
TO-247-3
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - Continuous Drain Current
68 A
Rds On - Drain-Source Resistance
40 mOhms
Vgs - Gate-Source Voltage
- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage
4.75 V
Qg - Gate Charge
125 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
450 W
Show more parameters (11)
Channel Mode
Enhancement
Tradename
MDmesh
Configuration
Single
Country of Assembly
CN
Country of Origin
CN
Fall Time
10.8 ns
Rise Time
52 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
107 ns
Typical Turn-On Delay Time
30.4 ns
Unit Weight
0.211644 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

STWA70N65DM6 Specifications and Datasheet | ChipSourceHub