Toshiba
2SC5087YTE85LF
RF Bipolar Transistors Radio-Freq Bipolar 80mA 150mW 12V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- RF Bipolar Transistors
- Series
- 2SC5087
- Package
- SOT-24-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- 12 V
- Emitter- Base Voltage VEBO
- 3 V
- Continuous Collector Current
- 80 mA
- Configuration
- Single
- Collector- Base Voltage VCBO
- 20 V
- DC Current Gain hFE Max
- 240
- Gain Bandwidth Product fT
- 7 GHz
- Maximum DC Collector Current
- 80 mA
- Pd - Power Dissipation
- 100 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.