onsemi
KSA1013YBU
Bipolar Transistors - BJT PNP Epitaxial Sil
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- KSA1013
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 160 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Pd - Power Dissipation
- 900 mW
- Gain Bandwidth Product fT
- 50 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 1 A
Show more parameters (7)
- Country of Assembly
- CN
- Country of Diffusion
- JP
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 60
- DC Current Gain hFE Max
- 320
- Part # Aliases
- KSA1013YBU_NL
- Unit Weight
- 0.006349 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.