ROHM Semiconductor
2SC4102U3HZGT106R
Bipolar Transistors - BJT H. Volt 120V, 50mA UMT3
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 50 mA
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 200 mW
- Gain Bandwidth Product fT
- 140 MHz
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
Show more parameters (4)
- Continuous Collector Current
- 50 mA
- Country of Origin
- PH
- DC Collector/Base Gain hfe Min
- 180
- DC Current Gain hFE Max
- 390
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.