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Vishay / Siliconix

SQJA37EP-T1_GE3

MOSFET -30V Vds -/+20V Vgs PowerPAK SO-8L

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Series
SQ
Package
PowerPAK-SO-8L-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

19 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
30 A
Rds On - Drain-Source Resistance
9.2 mOhms
Vgs th - Gate-Source Threshold Voltage
2.5 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
100 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
45 W
Show more parameters (7)
Configuration
Single
Channel Mode
Enhancement
Forward Transconductance - Min
32 S
Fall Time
24 ns
Rise Time
4 ns
Typical Turn-Off Delay Time
64 ns
Typical Turn-On Delay Time
12 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQJA37EP-T1_GE3 Specifications and Datasheet | ChipSourceHub