MACOM
CGHV60075D5-GP4
GaN FETs GaN HEMT Die DC-6.0GHz, 75 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 10 A
- Rds On - Drain-Source Resistance
- 280 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 10 V, 2 V
- Pd - Power Dissipation
- 41.6 W
- Country of Origin
- US
- Gain
- 17 dB
- Maximum Operating Frequency
- 6 GHz
- Minimum Operating Frequency
- 0 Hz
- Output Power
- 75 W
- Product
- GaN HEMTs
Show more parameters (3)
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- 150 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.