Nexperia
PMBT5551,215
Bipolar Transistors - BJT NPN HV 300mA 160V
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 0.3 A
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 80 at 1 mA, 5 V
- Height
- 1 mm
- Length
- 3 mm
Show more parameters (6)
- Width
- 1.4 mm
- DC Collector/Base Gain hfe Min
- 80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V
- Pd - Power Dissipation
- 250 mW
- Qualification
- AEC-Q101
- Part # Aliases
- PMBT5551 T/R
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.