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Toshiba

RN2109MFV,L3F

Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 47kohm

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN2109MFV
Package
SOT-723-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
47 kOhms
Typical Resistor Ratio
2.14
DC Collector/Base Gain hfe Min
70
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage VEBO
- 15 V
Channel Mode
Enhancement
Show more parameters (2)
Maximum DC Collector Current
- 100 mA
Unit Weight
0.000053 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN2109MFV,L3F Specifications and Datasheet | ChipSourceHub