Toshiba
TTC008(Q)
Bipolar Transistors - BJT NPN PWR Amp Trans 1.5A IC 3A 1.1W
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TTC008
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 285 V
- Collector- Base Voltage VCBO
- 600 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 600 V
- Maximum DC Collector Current
- 1.5 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 200
- Continuous Collector Current
- 1.5 A
- Pd - Power Dissipation
- 1.1 W
Show more parameters (1)
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.