SemiQ
GP2T080A120U
SiC MOSFETs
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- SiC MOSFETs
- Series
- GP2T080A120U
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Rds On - Drain-Source Resistance
- 80 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.8 V
- Qg - Gate Charge
- 58 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 188 W
- Channel Mode
- Enhancement
- Configuration
- Single
Show more parameters (6)
- Country of Origin
- PH
- Fall Time
- 10 ns
- Rise Time
- 6 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 16 ns
- Typical Turn-On Delay Time
- 10 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.