ON Semiconductor / Fairchild
FGA20S125P-SN00336
IGBT Transistors 1250V 20A Shorted Anode IGBT
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- IGBT Transistors
- Series
- FGA20S125P
- Package
- TO-3PN
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1250 V
- Collector-Emitter Saturation Voltage
- 2 V
- Maximum Gate Emitter Voltage
- 25 V
- Continuous Collector Current at 25 C
- 40 A
- Pd - Power Dissipation
- 250 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Gate-Emitter Leakage Current
- 500 nA
- Part # Aliases
- FGA20S125P_SN00336
- Unit Weight
- 0.225753 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.