Toshiba
TPC6503(TE85L,F,M)
Bipolar Transistors - BJT NPN hFE 400 to 1000 VCE 0.12V tF 45ns
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TPC6503
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
9 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 0.12 V
- Maximum DC Collector Current
- 1.5 A
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 400
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.