Toshiba
2SC5085-O(TE85L,F)
Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Package
- SC-70-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 12 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 3 V
- Maximum DC Collector Current
- 80 mA
- Gain Bandwidth Product fT
- 7 GHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 125 C
- DC Current Gain hFE Max
- 240
- Continuous Collector Current
- 80 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 80
- Pd - Power Dissipation
- 100 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.