Central Semiconductor
2N2369A TIN/LEAD
Bipolar Transistors - BJT 40Vcbo 40Vces 15V 4.5Vebo 200mA 500mA
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N2369A
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 500 mA
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 4.5 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Pd - Power Dissipation
- 360 mW
- Gain Bandwidth Product fT
- 500 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
Show more parameters (3)
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 40 at 10 mA, 1 V
- DC Current Gain hFE Max
- 120 at 10 mA, 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.