Microchip / Microsemi
2N2896
Bipolar Transistors - BJT BJTs
Basic Information
- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-18
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Not compliant (source record)
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 90 V
- Collector-Emitter Saturation Voltage
- 0.6 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 120 MHz
- DC Current Gain hFE Max
- 200
- DC Collector/Base Gain hfe Min
- 60
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.