Toshiba
HN4B01JE(TE85L,F)
Bipolar Transistors - BJT Vceo=-50V Vceo=50V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- HN4B01
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 0.15 A
- Gain Bandwidth Product fT
- 80 MHz
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 100 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.