ROHM Semiconductor
UMZ1NFHATR
Bipolar Transistors - BJT TRANSISTOR HIGH RELIABILITY
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 50 V, 50 V
- Collector- Base Voltage VCBO
- - 60 V, 60 V
- Emitter- Base Voltage VEBO
- - 6 V, 7 V
- Collector-Emitter Saturation Voltage
- - 500 mV, 400 mV
- Maximum DC Collector Current
- - 150 mA, 150 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- DC Collector/Base Gain hfe Min
- 120
Show more parameters (3)
- Pd - Power Dissipation
- 150 mW
- Qualification
- AEC-Q101
- Part # Aliases
- UMZ1NFHA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.