Toshiba
RFM12U7X(TE12L,Q)
RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 4A 20W 20V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- RF MOSFET Transistors
- Series
- RFM12
- Package
- PW-X-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 4 A
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Gain
- 10.8 dB
- Output Power
- 12 W
- Configuration
- Single
- Operating Frequency
- 520 MHz
- Type
- RF Power MOSFET
- Pd - Power Dissipation
- 20 W
- Vgs - Gate-Source Voltage
- 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.