Advanced Semiconductor, Inc.
AGR09030EF
RF MOSFET Transistors RF Transistor
Basic Information
- Manufacturer
- Advanced Semiconductor, Inc.
- Product Category
- RF MOSFET Transistors
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 4.25 A
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Configuration
- Single
- Operating Frequency
- 895 MHz
- Type
- RF Power MOSFET
- Pd - Power Dissipation
- 80 W
- Vgs - Gate-Source Voltage
- 15 V
- Vgs th - Gate-Source Threshold Voltage
- 5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.