ON Semiconductor
NVATS4A101PZT4G
MOSFET Power MOSFET P-Chann -30 V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- MOSFET
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 27 A
- Rds On - Drain-Source Resistance
- 23 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.6 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 18.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 36 W
Show more parameters (10)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Transistor Type
- 1 P-Channel
- Forward Transconductance - Min
- 17 S
- Fall Time
- 70 ns
- Rise Time
- 70 ns
- Typical Turn-Off Delay Time
- 80 ns
- Typical Turn-On Delay Time
- 9.2 ns
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.