Diodes Incorporated
BFS17NQTA
Bipolar Transistors - BJT RF Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- BFS17
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 11 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 50 mA
- Gain Bandwidth Product fT
- 3.2 GHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 180
- Continuous Collector Current
- 50 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 56
- Pd - Power Dissipation
- 350 mW
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.