Central Semiconductor
2N3117 TIN/LEAD
Bipolar Transistors - BJT 60Vcbo 60Vceo 6.0V 50mA 360mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3117
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 350 mV
- Pd - Power Dissipation
- 360 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 50 mA
- DC Collector/Base Gain hfe Min
- 100 at 1 uA, 5 V
Show more parameters (1)
- DC Current Gain hFE Max
- 500 at 10 uA, 5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.