ROHM Semiconductor
US6T8TR
Bipolar Transistors - BJT PNP+PNP -12VCEO-1.5A SOT-363T
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-363T-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 12 V
- Collector- Base Voltage VCBO
- - 15 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- - 85 mV
- Maximum DC Collector Current
- - 1.5 A
- Gain Bandwidth Product fT
- 400 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 680
- Height
- 0.77 mm
Show more parameters (6)
- Length
- 2 mm
- Width
- 1.7 mm
- Continuous Collector Current
- - 1.5 A
- DC Collector/Base Gain hfe Min
- 270
- Pd - Power Dissipation
- 1 W
- Part # Aliases
- US6T8
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.