Infineon Technologies
FF1MR12MM1HB11BPSA1
MOSFET Modules EconoDUAL 3 CoolSiC MOSFET 1200 V module
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET Modules
- Series
- EconoDUAL 3
- Mounting Style
- Press Fit
- Packaging
- Tray
Technical Specifications
25 parameters- Technology
- SiC
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 420 A
- Rds On - Drain-Source Resistance
- 1.91 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5.15 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 20 mW
- Configuration
- Dual
- Country of Assembly
- HU
Show more parameters (13)
- Country of Diffusion
- AT
- Country of Origin
- HU
- Fall Time
- 77 ns
- Height
- 20.5 mm
- Length
- 152 mm
- Product
- MOSFET Modules
- Rise Time
- 261 ns
- Tradename
- CoolSiC
- Typical Turn-Off Delay Time
- 319 ns
- Typical Turn-On Delay Time
- 182 ns
- Vf - Forward Voltage
- 4.14 V
- Width
- 62.5 mm
- Part # Aliases
- FF1MR12MM1H_B11 SP006049681
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.