NXP Semiconductors
MHT2012NT1
RF Amplifier RF LDMOS Integrated Power Amplifier, 2450 MHz, 12.5 W CW, 28 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF Amplifier
- Series
- MHT2012N
- Package
- PQFN-24
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Type
- RF LDMOS Integrated Power Amplifier
- Operating Frequency
- 2400 MHz to 2500 MHz
- P1dB - Compression Point
- 42.3 dBm
- Gain
- 29.7 dB
- Operating Supply Voltage
- 28 V
- Test Frequency
- 2450 MHz
- OIP3 - Third Order Intercept
- 43 dBm
- Operating Supply Current
- 75 mA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Number of Channels
- 2 Channel
- Part # Aliases
- 935361937528
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.