MACOM
MAGX-000040-0050TP
RF JFET Transistors DC-4 GHz Gain 13.5dB GaN SiC
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- RF JFET Transistors
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
14 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 13.5 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 50 V
- Id - Continuous Drain Current
- 0.3 A
- Output Power
- 5 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 95 C
- Pd - Power Dissipation
- 12 W
- Operating Frequency
- 4 GHz
- Operating Temperature Range
- - 40 C to + 95 C
Show more parameters (2)
- Type
- GaN SiC HEMT
- Forward Transconductance - Min
- 0.1 S
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.