Diodes Incorporated
DMT8012LPS-13
MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- DMT8012
- Package
- PowerDI5060-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Id - Continuous Drain Current
- 65 A
- Rds On - Drain-Source Resistance
- 14 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 34 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.1 W
Show more parameters (11)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 1 mm
- Length
- 5.8 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.9 mm
- Fall Time
- 3.5 ns
- Rise Time
- 3.8 ns
- Typical Turn-Off Delay Time
- 16.5 ns
- Typical Turn-On Delay Time
- 4.9 ns
- Unit Weight
- 0.003386 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.