Nexperia
PMBT3906M,315
Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DFN-1006-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- - 6 V
- Maximum DC Collector Current
- - 200 mA
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 60 at 100 uA, 1 V
- Height
- 0.47 mm
- Length
- 0.62 mm
Show more parameters (6)
- Width
- 1.02 mm
- Continuous Collector Current
- - 200 mA
- DC Collector/Base Gain hfe Min
- 180
- Pd - Power Dissipation
- 260 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000031 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.