Toshiba
2SC5949-O(Q)
Bipolar Transistors - BJT Transistor NPN 200V 15A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5949
- Package
- TO-3P-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 200 V
- Collector- Base Voltage VCBO
- 200 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.4 V
- Maximum DC Collector Current
- 15 A
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 160
- Height
- 5.2 mm (Max)
Show more parameters (6)
- Length
- 26 mm
- Width
- 20.5 mm (Max)
- Continuous Collector Current
- 15 A
- DC Collector/Base Gain hfe Min
- 55
- Pd - Power Dissipation
- 220 W
- Unit Weight
- 0.238311 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.