Nexperia
PBHV8515QA-QZ
Bipolar Transistors - BJT PBHV8515QA-Q/SOT1215/DFN1010D-
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DFN1010D-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 150 V
- Collector- Base Voltage VCBO
- 150 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 120 mV
- Pd - Power Dissipation
- 740 mW
- Gain Bandwidth Product fT
- 75 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (4)
- Continuous Collector Current
- 500 mA
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 100 at 100 mA, 10 V
- Part # Aliases
- 934669932147
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.