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Diodes Incorporated

ZX5T955ZTA

Bipolar Transistors - BJT 140V PNP Lw Saturatn Med power transistor

Basic Information

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Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Series
ZX5T955
Package
SOT-89-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 140 V
Collector- Base Voltage VCBO
- 180 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
- 37 mV
Maximum DC Collector Current
- 3 A
Gain Bandwidth Product fT
120 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
300 at - 1 A, - 5 V
Height
1.6 mm
Show more parameters (6)
Length
4.6 mm
Width
2.6 mm
Continuous Collector Current
- 3 A
DC Collector/Base Gain hfe Min
5 at - 10 A, - 5 V
Pd - Power Dissipation
2100 mW
Unit Weight
0.004603 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

ZX5T955ZTA Specifications and Datasheet | ChipSourceHub