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Toshiba

RN1103MFV(TPL3)

Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 22Kohms

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN1103
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

11 parameters
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
22 kOhms
Typical Resistor Ratio
1
DC Collector/Base Gain hfe Min
70
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
70

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN1103MFV(TPL3) Specifications and Datasheet | ChipSourceHub