Nexperia
PBHV8115TLHR
Bipolar Transistors - BJT 150 V, 1 A NPN high-voltage low VCEsat BISS transistor
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 150 V
- Collector- Base Voltage VCBO
- 400 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 50 mV
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
- Continuous Collector Current
- 1 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 50
- Pd - Power Dissipation
- 300 mW
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.