Panjit
MMDT3904_R1_00001
Bipolar Transistors - BJT DUALNPNGENERALPURPOSESWITCHINGTRANSISTOR VCE40V IC200mA SOT-363
Basic Information
View Datasheet ↗- Manufacturer
- Panjit
- Product Category
- Bipolar Transistors - BJT
- Series
- DT-03TSN
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Maximum DC Collector Current
- 200 mA
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 225 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 200 mA
Show more parameters (4)
- Country of Origin
- TW
- DC Collector/Base Gain hfe Min
- 100 at 10 mA, 1 V
- DC Current Gain hFE Max
- 300 at 10 mA, 1 V
- Unit Weight
- 0.000280 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.