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MACOM

UF28150J

RF MOSFET Transistors 100-500MHz 150Watts 28Volt Gain 8dB

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
RF MOSFET Transistors
Package
375-04
Mounting Style
SMD/SMT
Packaging
Tray

Technical Specifications

14 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
16 A
Vds - Drain-Source Breakdown Voltage
65 V
Gain
8 dB
Output Power
150 W
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Configuration
Dual
Operating Frequency
100 MHz to 500 MHz
Type
RF Power MOSFET
Pd - Power Dissipation
389 W
Show more parameters (2)
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
6 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

UF28150J Specifications and Datasheet | ChipSourceHub