STMicroelectronics
2ST31A
Bipolar Transistors - BJT Low voltage NPN Power Transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- 2ST31A
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Maximum DC Collector Current
- 5 A
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 3 A
- DC Collector/Base Gain hfe Min
- 150
- Pd - Power Dissipation
- 40 W
- Unit Weight
- 0.081130 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.