ON Semiconductor / Fairchild
MJE350STU
Bipolar Transistors - BJT PNP Epitaxial Sil
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- MJE350
- Package
- TO-126-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 300 V
- Collector- Base Voltage VCBO
- - 300 V
- Emitter- Base Voltage VEBO
- - 5 V
- Maximum DC Collector Current
- 0.5 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 240
- Height
- 11 mm
- Length
- 8 mm
- Width
- 3.25 mm
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 20 W
- Part # Aliases
- MJE350STU_NL
- Unit Weight
- 0.026843 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.