Parallax
500-00003
Bipolar Transistors - BJT 2N3906 Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Parallax
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-92-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
- Continuous Collector Current
- 200 mA
- Pd - Power Dissipation
- 250 mW
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.