ROHM Semiconductor
2SAR562F3TR
Bipolar Transistors - BJT PNP -6A Ic -30V Vceo HUML2020L3
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- DFN2020-3S
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 30 V
- Collector- Base Voltage VCBO
- - 30 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 150 mV
- Maximum DC Collector Current
- - 7 A
- Gain Bandwidth Product fT
- 180 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 500
- Continuous Collector Current
- - 6 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 2.1 W
- Part # Aliases
- 2SAR562F3
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.